Characterization and Sensing Properties of ZnO Film In FG-FET Sensor System for NO2 Detection
نویسنده
چکیده
– A new type of NO2 gas sensor has been made using the Floating Gate Field Effect Transistor (FG-FET) sensor system. 200 nm ZnO films were deposited on Si/Ti/Pt electrodes, which are mounted on FG-FET chips. SEM and EDX characterization methods were employed to study the surface of these films. The change in the work function of the film due to their interaction with NO2 has been measured at various temperatures and relative humidities. The sensor exhibits high sensitivity and selectivity to 1-20 ppm NO2 at a temperature range between room temperature and 165°C. With t50~10 s, the response time is quite fast. Index Term-Gas Sensor, Floating Gate Field Effect Transistor (FG-FET), Zinc Oxide, Nitrogen Dioxide.
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